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专利名称：Flash memory
发明人：Andrei Mihnea,Chun Chen申请号：US11219020申请日：20050901公开号：US07259996B2公开日：20070821
专利附图：
摘要：Flash memory supporting methods for erasing memory cells using a decrease inmagnitude of a source voltage of a first polarity to increase the magnitude of a controlgate voltage of a second polarity during an erase period.
申请人：Andrei Mihnea,Chun Chen
地址：Boise ID US,Boise ID US
国籍：US,US
代理机构：Leffert Jay & Polglaze, P.A.
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